2SK1358 Datasheet, Toshiba Semiconductor

* Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.)
* High Forward Transfer Admittance - Yfs = 4.0S (Typ.)
* Low Leakage Current - IDSS = 300µA (Max.) .

Features
* Low Drain-Source ON Resistance - RDS(ON) = 1.1Ω (Typ.)
* High Forward Transfer Admittance - Yfs = .